个人基本信息：

查超飞，男，1997年生，博士，籍贯安徽省安庆市。本科毕业于中南大学计算机学院，于北京邮电大学获得硕士和博士学位，现为电子信息工程系专任教师。主要研究领域为半导体光电器件。已发表SCI收录论文8篇。

所属系：

电子信息工程系

主讲课程：

《数字信号处理》、《信息论基础》

研究领域：

半导体光电器件

教科研项目：

(1) 池州学院高层次人才科研启动基金项目，(RZ2500000985)，主持。

(2) 池州学院校级自然重点项目，(CZ2025ZRZ01)，主持。

代表性论文/著作：

1. Effective Surface Passivation of GaAs Nanowire Photo-detectors by a Thin ZnO Capping[J]. Nanoscale, 2024, DOI: 10.1039/D4NR01022A.

2. Low-Consumption Synaptic Devices Based on Gate-All-Around InAs Nanowire Field-Effect Transistors. Nanoscale research letters, 2022, 17(1): 101.

3. An artificial optoelectronic synapse based on an InAs nanowire phototransistor with negative photoresponse. Optical and Quantum Electronics, 2021, 53(10):1-12.

4. Plasmon-enhanced deep-sub wavelength lateral nanowire solar cells[J]. Optical and Quantum Electronics. 2024, 56(3):378.

5. Non-111-oriented semiconductor nanowires:growth, properties, and applications[J], Nanoscale, 2023, 15, 3032-3050.

6. Initialization of Nanowire or Cluster Growth Critically Controlled by the Effective V/III Ratio at the Early Nucleation Stage[J], The Journal of Physical Chemistry Letters, 2023, 14 (19), 4433-4439.

7. Low-threshold miniaturized core-shell GaAs/InGaAs nanowire/quantum-dot hybrid structure nanolasers[J], Optics & Laser Technology, 2022, 152, 108150, ISSN 0030-3992.(SCI)

8. Initialization of Nanowire or Cluster Growth Critically Controlled by the Effective V/III Ratio at the Early Nucleation Stage[J], The Journal of Physical Chemistry Letters, 2023, 14 (19), 4433-4439.(SCI)